Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study
نویسندگان
چکیده
Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded carbon-doped semi-insulating is proposed suppress buffer-induced effect. Two-dimensional transient simulation was carried out show successful suppression SCPG-HEMTs compared conventional HEMTs. The mechanism suppressing dynamic on-resistance degradation by ejecting holes from SCPG into high resistive layer after off-state stress illustrated based on energy band diagrams. This paper contributes innovative device potentially solve GaN power devices.
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ژورنال
عنوان ژورنال: Electronics
سال: 2021
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics10080942